HIGH EFFICIENCY THIN FILM GaAs SOLAR CELLS WITH IMPROVED RADIATION HARDNESS
نویسندگان
چکیده
In the present work, the performance of thin film GaAs solar cells with a mirror back contact is compared to regular GaAs cells on a substrate. A world record efficiency of 24.5% AM1.5G is obtained for a thin film cell with a gold mirror. The thin film cell thickness is only half of the regular GaAs cell thickness, which improves the radiation resistance for use in space applications and enhances the open-circuit voltage by more than 10 mV. The efficiency of the thin film cell, which is 0.5% lower at this stage, has the potential to surpass that of regular GaAs cells in the near future.
منابع مشابه
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